DocumentCode
3453196
Title
Process development for the realization of thermally-reliable enhancement-mode InAlAs/InGaAs/InP HEMTs with excellent DC and RF performance
Author
Zhao, Weifeng ; Jin, Niu ; Chen, Guang ; Kumar, Vipan ; Adesida, Ilesanmi
Author_Institution
Micro and Nanotechnology Laboratory and Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, IL 61801
fYear
2006
fDate
26-28 June 2006
Firstpage
91
Lastpage
92
Keywords
Gold; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Metallization; Ohmic contacts; Radio frequency; Rapid thermal annealing;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2006 64th
Conference_Location
State College, PA, USA
ISSN
1548-3770
Print_ISBN
0-7803-9748-7
Type
conf
DOI
10.1109/DRC.2006.305133
Filename
4097550
Link To Document