Title :
AlGaAs/InGaAs buried heterostructure laser diodes for pumping solid state lasers
Author :
Sýrbu, A. ; Mereutza, A. ; Suruceanu, G. ; Yakovlev, V. ; Catughin, O. ; Vieru, S. ; Popescu, I.M. ; Ispasoiu, R.G. ; Predescu, M.
Author_Institution :
Tech. Univ. of Moldova, Chisinau, Moldova
Abstract :
AlGaAs/InGaAs buried heterostructure laser diodes emitting at 960 nm for pumping solid state lasers have been fabricated and their optical and thermal characteristics have been studied. Cylindrical microlenses were used for obtaining equal divergence angles in both planes, perpendicular and parallel to the active layer plane at 1 W of CW operation optical power. The thermal resistance, active layer and mirror temperatures have been determined as well
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser mirrors; optical pumping; semiconductor lasers; thermal resistance; 1 W; 960 nm; AlGaAs-InGaAs; CW operation optical power; active layer; active layer plane; buried heterostructure laser diodes; cylindrical microlenses; divergence angles; mirror temperatures; optical pumping; solid state lasers; thermal characteristics; thermal resistance; Diode lasers; Indium gallium arsenide; Laser excitation; Lenses; Microoptics; Mirrors; Optical pumping; Solid lasers; Stimulated emission; Thermal resistance;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.495058
