AlGaAs/InGaAs buried heterostructure laser diodes for pumping solid state lasers

Author

Sýrbu, A. ; Mereutza, A. ; Suruceanu, G. ; Yakovlev, V. ; Catughin, O. ; Vieru, S. ; Popescu, I.M. ; Ispasoiu, R.G. ; Predescu, M.

Author_Institution

Tech. Univ. of Moldova, Chisinau, Moldova

fYear

1995

fDate

11-14 Oct 1995

Firstpage

453

Lastpage

456

Abstract

AlGaAs/InGaAs buried heterostructure laser diodes emitting at 960 nm for pumping solid state lasers have been fabricated and their optical and thermal characteristics have been studied. Cylindrical microlenses were used for obtaining equal divergence angles in both planes, perpendicular and parallel to the active layer plane at 1 W of CW operation optical power. The thermal resistance, active layer and mirror temperatures have been determined as well

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser mirrors; optical pumping; semiconductor lasers; thermal resistance; 1 W; 960 nm; AlGaAs-InGaAs; CW operation optical power; active layer; active layer plane; buried heterostructure laser diodes; cylindrical microlenses; divergence angles; mirror temperatures; optical pumping; solid state lasers; thermal characteristics; thermal resistance; Diode lasers; Indium gallium arsenide; Laser excitation; Lenses; Microoptics; Mirrors; Optical pumping; Solid lasers; Stimulated emission; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International

Conference_Location

Sinaia

Print_ISBN

0-7803-2647-4

Type

conf

DOI

10.1109/SMICND.1995.495058

Filename

495058