Title :
InGaAsP/InP laser diodes emitting at 1300 nm for optical communications
Author :
Sârbu, A. ; Desan, P. ; Andros, T. ; Iacovlev, V. ; Suruceanu, G. ; Snigur, A. ; Smântânã, V.
Author_Institution :
Tech. Univ. of Moldova, Chisinau, Moldova
Abstract :
The fabrication process of InGaAsP/InP buried heterostructure laser diode modules emitting at 1300 nm is described. Results on testing these modules in a real fiber optic communication are presented as well. It was demonstrated that heterostructure laser diodes produced by a combination of chemical and melt-etching and liquid phase epitaxy have high performance characteristics. These laser diodes were used to fabricate fiber optic pigtailed modules. The operation of these modules in a real fiber optic communication system was compared with the operation of standard emitters and considerable increasing of system parameters. At the module mean operating current of 25 mA and transmission rate of 41.2 Mbit/s for a 25 km transmission line the bit error rate (BER) of 10-11 was measured
Keywords :
III-V semiconductors; etching; gallium arsenide; indium compounds; liquid phase epitaxial growth; optical fibre communication; optical transmitters; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; 1300 nm; 25 km; 25 mA; 41.2 Mbit/s; InGaAsP-InP; bit error rate; buried heterostructure laser diode modules; chemical etching; fiber optic communication; liquid phase epitaxy; mean operating current; melt etching; optical communications; performance characteristics; pigtailed modules; system parameters; transmission rate; Bit error rate; Chemical lasers; Diode lasers; Epitaxial growth; Indium phosphide; Optical device fabrication; Optical fiber communication; Optical fiber testing; Optical fibers; Stimulated emission;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.495059
