DocumentCode
3453227
Title
AlGaN/GaN Field-Effect Surface Acoustic Wave Filters with >40-dB Isolation for Monolithic Integration with HEMTs
Author
Shigekawa, Naoteru ; Nishimura, Kazumi ; Suemitsu, Tetsuya ; Yokoyama, Haruki ; Hohkawa, Kohji
Author_Institution
NTT Photonics Laboratories, NTT Corporation, Atsugi, Kanagawa, 243-0198 JAPAN. Email: shige@aecl.ntt.co.jp Phone: +81-46-240-2865 Fax: +81-46-240-3261
fYear
2006
fDate
26-28 June 2006
Firstpage
95
Lastpage
96
Keywords
Acoustic waves; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Monolithic integrated circuits; SAW filters; Schottky barriers; Surface acoustic waves; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2006 64th
Conference_Location
State College, PA, USA
ISSN
1548-3770
Print_ISBN
0-7803-9748-7
Type
conf
DOI
10.1109/DRC.2006.305135
Filename
4097552
Link To Document