• DocumentCode
    3453254
  • Title

    Current Collapse-Free Vertical Submicron Channel GaN-based Transistors with InAlGaN Quaternary Alloy Contact Layers

  • Author

    Morita, Tatsuo ; Nakazawa, Satoshi ; Ueda, Tetsuzo ; Tanaka, Tsuyoshi

  • Author_Institution
    Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co. Ltd., 1 Kotari-Yakemachi, Nagaokakyo-shi, Kyoto 617-8520, JAPAN. Email: morita.tatsuo@jp.panasonic.com /Phone:+81-75-956-9055 /Fax:+81-75-956-9110
  • fYear
    2006
  • fDate
    26-28 June 2006
  • Firstpage
    97
  • Lastpage
    98
  • Keywords
    Aluminum gallium nitride; Current density; Current-voltage characteristics; Electrodes; Gallium nitride; Metalworking machines; Ohmic contacts; Pulse measurements; Scanning electron microscopy; Semiconductor devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2006 64th
  • Conference_Location
    State College, PA, USA
  • ISSN
    1548-3770
  • Print_ISBN
    0-7803-9748-7
  • Type

    conf

  • DOI
    10.1109/DRC.2006.305136
  • Filename
    4097553
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3453254