Title :
Carrier injection in low confinement laser structures with separate narrow active and guiding layers
Author :
Buda, M. ; Petrescu-Prahova, I.B. ; Cengher, D. ; Vlaicu, M. ; Diaconescu, D.
Author_Institution :
Inst. of Phys. & Technol. of Mater., Bucharest, Romania
Abstract :
The separate narrow active and guiding layer structures were assessed for the recombination losses inside the guiding layer. The efficiency is reasonable high for structure with confinement factor lower than 0.007 and active region higher than 10 nm
Keywords :
electron-hole recombination; optical losses; semiconductor device models; semiconductor lasers; active layers; carrier injection; confinement factor; diode lasers; efficiency; guiding layers; low confinement laser structures; recombination losses; Carrier confinement; Charge carrier processes; Current density; Equations; Laser theory; Optical attenuators; Photonic band gap; Physics; Refractive index; Spontaneous emission;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.495060
