DocumentCode
3453259
Title
Carrier injection in low confinement laser structures with separate narrow active and guiding layers
Author
Buda, M. ; Petrescu-Prahova, I.B. ; Cengher, D. ; Vlaicu, M. ; Diaconescu, D.
Author_Institution
Inst. of Phys. & Technol. of Mater., Bucharest, Romania
fYear
1995
fDate
11-14 Oct 1995
Firstpage
461
Lastpage
464
Abstract
The separate narrow active and guiding layer structures were assessed for the recombination losses inside the guiding layer. The efficiency is reasonable high for structure with confinement factor lower than 0.007 and active region higher than 10 nm
Keywords
electron-hole recombination; optical losses; semiconductor device models; semiconductor lasers; active layers; carrier injection; confinement factor; diode lasers; efficiency; guiding layers; low confinement laser structures; recombination losses; Carrier confinement; Charge carrier processes; Current density; Equations; Laser theory; Optical attenuators; Photonic band gap; Physics; Refractive index; Spontaneous emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location
Sinaia
Print_ISBN
0-7803-2647-4
Type
conf
DOI
10.1109/SMICND.1995.495060
Filename
495060
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