Title :
50 nm AlGaN/GaN HEMT Technology for mm-wave Applications
Author :
Palacios, T. ; Fichtenbaum, N. ; Keller, S. ; DenBaars, S.P. ; Mishra, U.K.
Author_Institution :
Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106-9560. E-mail: tpalacios@ece.ucsb.edu; Phone: +1 (805)893-3812 (x225); FAX: +1 (805)893-8714
Keywords :
Aluminum gallium nitride; Electrons; Etching; Foot; Frequency; Gallium nitride; HEMTs; Lithography; Parasitic capacitance; Silicon compounds;
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
Print_ISBN :
0-7803-9748-7
DOI :
10.1109/DRC.2006.305137
