Title :
Long-wavelength lasers prepared by semiconductor microfabrication
Author :
Arai, S. ; Kojima, T. ; Madhan Raj, M. ; Nunoya, N. ; Tanaka, S. ; Toyoshima, S.
Author_Institution :
Tokyo Inst. of Technol., Japan
fDate :
Aug. 30 1999-Sept. 3 1999
Abstract :
Fabrication technologies of semiconductor microstructures with the size from sub-/spl mu/m to tens nm range are very attractive for realization of novel structure photonic devices and their integrations in the field of optoelectronics. We have been investigating low-damage fabrication technologies suitable for advanced semiconductor lasers, for examples, 1.55 /spl mu/m wavelength GaInAsP-InP quantum-wire lasers and multiple-micro-cavity (MMC) lasers, by adopting an electron-beam (EB) direct writing followed by a wet chemical etching and an OMVPE embedding growth.
Keywords :
III-V semiconductors; MOCVD; electron beam lithography; etching; gallium arsenide; indium compounds; microcavity lasers; optical fabrication; quantum well lasers; semiconductor quantum wires; vapour phase epitaxial growth; 1.55 /spl mu/m wavelength GaInAsP-InP quantum-wire lasers; 1.55 mum; GaInAsP-InP; OMVPE embedding growth; advanced semiconductor lasers; electron-beam direct writing; long-wavelength lasers; low-damage fabrication technologies; multiple-micro-cavity lasers; novel structure photonic devices; optical fabrication technologies; optoelectronics; semiconductor microfabrication; semiconductor microstructures; wet chemical etching; Chemical lasers; Chemical technology; Distributed feedback devices; Fluctuations; Laser feedback; Optical device fabrication; Semiconductor lasers; Threshold current; Wet etching; Wire;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on
Conference_Location :
Seoul, South Korea
Print_ISBN :
0-7803-5661-6
DOI :
10.1109/CLEOPR.1999.814781
