Title :
Improved processing technology for GaN-capped deeply-recessed GaN HEMTs without surface passivation
Author :
Shen, L. ; McCarthy, L. ; Palacios, T. ; Wong, M.H. ; Poblenz, C. ; Corrion, A. ; Keller, S. ; DenBaars, S.P. ; Speck, J.S. ; Mishra, U.K.
Author_Institution :
Department of Electrical and Computer Engineering, University of California, Santa Barbara, U.S.A. Email: lkshen@ece.ucsb.edu Tel: +1(805)893-8594 Fax: +1(805)893-8714
Keywords :
Aluminum gallium nitride; Etching; Gallium nitride; HEMTs; MODFETs; Passivation; Plasma applications; Plasma devices; Plasma materials processing; Plasma measurements;
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
Print_ISBN :
0-7803-9748-7
DOI :
10.1109/DRC.2006.305138
