• DocumentCode
    3453301
  • Title

    Study on the manufacturing technology of GaP-SnO2 structures for ultraviolet radiation sensors

  • Author

    Dorogan, V. ; Ivashchenco, Anatolii ; Snigur, Anatolii ; Shchurova, Olga ; Vieru, Tatiana

  • Author_Institution
    Tech. Univ. of Moldova, Kishinev, Moldova
  • fYear
    1995
  • fDate
    11-14 Oct 1995
  • Firstpage
    469
  • Lastpage
    472
  • Abstract
    The manufacturing technology of GaP-SnO2 structures for radiation sensors is described in this article. The technological methods are liquid-phase GaP epitaxial growth and dichlorobis(athetilacetonat)tin(IV) vapor pyrolysis for SnO2 deposition. The doping with rare earth elements Er and Y was used for obtaining the necessary free charge carrier concentration in GaP epitaxial layers
  • Keywords
    III-V semiconductors; carrier density; gallium compounds; liquid phase epitaxial growth; pyrolysis; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; tin compounds; ultraviolet detectors; GaP-SnO2; free charge carrier concentration; incident solar intensity; liquid-phase epitaxial growth; manufacturing technology; ultraviolet radiation sensors; vapor pyrolysis; Manufacturing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-2647-4
  • Type

    conf

  • DOI
    10.1109/SMICND.1995.495062
  • Filename
    495062
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3453301