• DocumentCode
    3453323
  • Title

    Model for the electrical conductance transient behaviour in thick film SnO2 semiconductor gas sensors

  • Author

    Vilanova, Xaviw ; Llobet, Eduard ; Correig, Xavier

  • Author_Institution
    Dept. d´´Enginyeria Electron., Univ. Rovira i Virgili, Tarragona, Spain
  • fYear
    1995
  • fDate
    11-14 Oct 1995
  • Firstpage
    473
  • Lastpage
    476
  • Abstract
    An improved nonlinear diffusion-reaction model describing the conductance transient behaviour in thick film SnO2 n-type semiconductor gas sensors, which are subject to a step change in gas concentration, is introduced in this study. This model depicts accurately the experimental conductance transient of these sensors
  • Keywords
    diffusion; electrical conductivity; gas sensors; semiconductor device models; semiconductor materials; thick film devices; tin compounds; transient analysis; SnO2; electrical conductance transient behaviour; n-type semiconductor; nonlinear diffusion-reaction model; semiconductor gas sensors; thick film SnO2; Chemical sensors; Electron traps; Gas detectors; Gases; Nonlinear equations; Schottky barriers; Steady-state; Thick film sensors; Thick films; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-2647-4
  • Type

    conf

  • DOI
    10.1109/SMICND.1995.495063
  • Filename
    495063
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3453323