Title :
Measuring the base resistance of bipolar transistors
Author :
Nakadai, Takako ; Hashimoto, Kenji
Author_Institution :
Fujitsu Ltd., Kawasaki, Japan
Abstract :
Methods of measuring the base resistance of bipolar transistors are examined and compared using a two-dimensional device simulator. It was found that the accuracy of these models is dependent on their representation of the base-collector capacitance in the transistor equivalent circuit model. A novel method which uses the equivalent circuit model without being influenced by the external base-collector capacitance is proposed. The proposed model is useful in estimating the base resistance at all current levels
Keywords :
bipolar transistors; electric resistance measurement; semiconductor device models; accuracy; base resistance measurement; base-collector capacitance; bipolar transistors; transistor equivalent circuit model; two-dimensional device simulator; wide current range; Bipolar transistors; Capacitance measurement; Circuit simulation; Electrical resistance measurement; Equivalent circuits; Frequency estimation; Frequency measurement; Impedance; Ultra large scale integration; Voltage;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-0103-X
DOI :
10.1109/BIPOL.1991.160988
