DocumentCode
3453413
Title
Physical Mechanisms Limiting the Channel Mobility in 4H-SiC MOSFETs
Author
Matocha, Kevin ; Tilak, Vinayak ; Balaji, S. ; Arthur, Steve ; Rao, Ramakrishna ; Tucker, Jesse
fYear
2006
fDate
26-28 June 2006
Firstpage
111
Lastpage
112
Keywords
Electron mobility; Hall effect; MOSFETs; Magnetic field measurement; Ohmic contacts; Oxidation; Silicon carbide; Substrates; Temperature; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2006 64th
Conference_Location
State College, PA, USA
ISSN
1548-3770
Print_ISBN
0-7803-9748-7
Type
conf
DOI
10.1109/DRC.2006.305143
Filename
4097560
Link To Document