DocumentCode
3453583
Title
Dependence of linewidth enhancement factor on quantum well width and depth in lnGaAs/GaAs broad-area lasers
Author
Stohs, J. ; Bossert, D.J. ; Gallant, D.J. ; Brueck, Steven R. J.
Author_Institution
Center for High Technology Materials, University of New Mexico
Volume
11
fYear
1997
fDate
18-23 May 1997
Firstpage
226
Lastpage
227
Keywords
Charge carrier density; Density measurement; Gallium arsenide; Lattices; Photoluminescence; Pulse measurements; Radiative recombination; Semiconductor lasers; Superlattices; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 1997. CLEO '97., Summaries of Papers Presented at the Conference on
Conference_Location
Baltimore, MD, USA
Print_ISBN
0-7803-4125-2
Type
conf
DOI
10.1109/CLEO.1997.603050
Filename
603050
Link To Document