High-linearity high current drivability GaInP/GaAs MISFET using GaInP airbridge gate structure grown by GSMBE

Author

Lu, Shey-Shi ; Lin, Yo-Shen

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

1995

fDate

11-14 Oct 1995

Firstpage

563

Lastpage

566

Abstract

A novel structure GaInP/GaAs MISFET with the undoped GaInP serving as the airbridge for gate metal to run over it between the active region and pad was designed and fabricated for high power and high frequency applications. Due to the GaInP airbridge gate structure, a high current drive, high breakdown, high linearity, high speed and low leakage gate current GaInP/GaAs MISFET was achieved

Keywords

III-V semiconductors; MISFET; chemical beam epitaxial growth; electric breakdown; gallium arsenide; gallium compounds; indium compounds; leakage currents; microwave field effect transistors; microwave power transistors; power field effect transistors; GSMBE; GaInP airbridge gate structure; GaInP-GaAs; MISFET; gas source MBE; high breakdown; high current drivability; high frequency applications; high linearity; high power applications; high speed operation; low leakage gate current; undoped GaInP; Bridge circuits; Capacitance; Gallium arsenide; Indium phosphide; Leakage current; MISFETs; Photonic band gap; Radio frequency; Voltage; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International

Conference_Location

Sinaia

Print_ISBN

0-7803-2647-4

Type

conf

DOI

10.1109/SMICND.1995.495079

Filename

495079