DocumentCode
3453692
Title
Semiconductor Light-Emitting Diodes with Separated Current-Injection and Light-Emitting Areas
Author
Wang, Xue-Lun
Author_Institution
Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba 305-8568, Japan. Phone: +81-29-861-5299; Fax : +81-29-861-3357 ; E-mail: xl.wang@aist.go.jp
fYear
2006
fDate
26-28 June 2006
Firstpage
133
Lastpage
134
Keywords
Electrodes; Epitaxial growth; Epitaxial layers; Gallium arsenide; Light emitting diodes; Metals industry; Nanotechnology; Photonic band gap; Substrates; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2006 64th
Conference_Location
State College, PA, USA
ISSN
1548-3770
Print_ISBN
0-7803-9748-7
Type
conf
DOI
10.1109/DRC.2006.305154
Filename
4097571
Link To Document