Fabrication of High-Power Vertical GaN-Based Light-Emitting Diodes with Selective Nickel Electroplating and Patterned Laser Lift-Off Techniques

Author

Wang, Shui-Jinn ; Chen, Shiue-Lung ; Uang, Kai-Ming ; Lee, Wei-Chi ; Chen, Tron-Min ; Liou, Bor-Wen ; Yang, Su-Hua

Author_Institution

Institute of Microelectronics, Dept. of Electrical Eng., National Cheng Kung Univ., Tainan, Taiwan. Phone: +886-6-2757575-62351, Fax: +886-6-2763882, E-mail: sjwang@mail.ncku.edu.tw

fYear

2006

fDate

26-28 June 2006

Firstpage

137

Lastpage

138

Abstract

A novel process for fabricating high-power Vertical-structure Metallic substrate GaN-based light-emitting diodes (VM-LEDs) employing selective nickel electroplating and patterned laser lift-off (LLO) techniques was proposed. Advantages including the avoidance of metal-cutting process, easy in die size definition through laser spot control, and simplification of fabrication processes (i.e., fewer masks as well as less effort in wire bonding) were demonstrated. As compared to regular lateral-structure LEDs, the VM-LEDs experimentally show having an increase in light output power (Lop) (i.e., ??Lop/Lop) by 293.4% at 350 mA with a decrease in forward voltage from 3.73 V down to 3.32 V.

Keywords

Laser theory; Light emitting diodes; Nickel; Optical device fabrication; Power generation; Rough surfaces; Surface morphology; Surface roughness; Voltage; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2006 64th

Conference_Location

State College, PA, USA

ISSN

1548-3770

Print_ISBN

0-7803-9748-7

Type

conf

DOI

10.1109/DRC.2006.305156

Filename

4097573