Title :
40-W/mm Double Field-plated GaN HEMTs
Author :
Wu, Y.F. ; Moore, M. ; Saxler, A. ; Wisleder, T. ; Parikh, P.
Author_Institution :
Cree Santa Barbara Technology Center, 340 Storke Road, Goleta, CA 93117
Keywords :
Capacitance; Degradation; Feedback; Gallium nitride; HEMTs; MODFETs; Power generation; Robustness; Silicon compounds; Voltage;
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
Print_ISBN :
0-7803-9748-7
DOI :
10.1109/DRC.2006.305162
