DocumentCode

3453935

Title

High-Breakdown Voltage AlGaN/GaN HEMTs using trench gates

Author

Dora, Y. ; Chakraborty, A. ; McCarthy, L. ; Keller, S. ; DenBaars, S.P. ; Mishra, U.K.

Author_Institution

Electrical and Computer Engineering Dept, Univ. of California, Santa Barbara, CA93106. yuvaraj@umail.ucsb.edu, (805)893 3812

fYear

2006

fDate

26-28 June 2006

Firstpage

161

Lastpage

162

Keywords

Aluminum gallium nitride; Atomic force microscopy; Etching; Gallium nitride; HEMTs; MODFETs; Metallization; Passivation; Scanning electron microscopy; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2006 64th

Conference_Location

State College, PA, USA

ISSN

1548-3770

Print_ISBN

0-7803-9748-7

Type

conf

DOI

10.1109/DRC.2006.305166

Filename

4097583