DocumentCode

3453970

Title

p-GaN/AlGaN/GaN Enhancement-Mode HEMTs

Author

Suh, C.-S. ; Chini, A. ; Fu, Y. ; Poblenz, C. ; Speck, J.S. ; Mishra, U.K.

Author_Institution

Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106 USA. Email: suh@umail.ucsb.edu, Phone: (805)893-3812, Fax: (805)893-8714

fYear

2006

fDate

26-28 June 2006

Firstpage

163

Lastpage

164

Keywords

Aluminum gallium nitride; Dry etching; Gallium nitride; HEMTs; MODFETs; Plasma applications; Plasma devices; Plasma measurements; Pulse measurements; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2006 64th

Conference_Location

State College, PA, USA

ISSN

1548-3770

Print_ISBN

0-7803-9748-7

Type

conf

DOI

10.1109/DRC.2006.305167

Filename

4097584