• DocumentCode
    3454064
  • Title

    InAsP/InAs Nanowire Heterostructure Field Effect Transistors

  • Author

    Lind, Erik ; Wernersson, Lars-Erik

  • Author_Institution
    Solid State Physics / Nanometer Consortium, Lund University, Box 118, S-22100 Sweden
  • fYear
    2006
  • fDate
    26-28 June 2006
  • Firstpage
    173
  • Lastpage
    174
  • Keywords
    Doping; FETs; Geometry; HEMTs; MODFETs; Nanoscale devices; Photonic band gap; Physics; Solid state circuits; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2006 64th
  • Conference_Location
    State College, PA, USA
  • ISSN
    1548-3770
  • Print_ISBN
    0-7803-9748-7
  • Type

    conf

  • DOI
    10.1109/DRC.2006.305171
  • Filename
    4097588
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3454064