DocumentCode
3454102
Title
Study on energy band of InGaN/GaN self-assembled quantum dots by deep level transient spectroscopy
Author
Kim, E.K. ; Kim, J.S. ; Kwon, S.-Y. ; Kim, H.J. ; Yoon, E.
fYear
2004
fDate
Oct. 27-29, 2004
Firstpage
172
Lastpage
173
Keywords
Atomic force microscopy; Atomic measurements; Energy states; Force measurement; Gallium nitride; Light emitting diodes; Optical devices; Quantum dots; Spectroscopy; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2004. Digest of Papers. 2004 International
Print_ISBN
4-99024720-5
Type
conf
DOI
10.1109/IMNC.2004.245779
Filename
1459529
Link To Document