DocumentCode :
3454394
Title :
Indium Antimonide based Quantum Well FETs for Ultra-High Speed Electronics
Author :
Ashley, T. ; Buckle, L. ; Emeny, M.T. ; Fearn, M. ; Hayes, D.G. ; Hilton, K.P. ; Jefferies, R. ; Martin, T. ; Nash, K.J. ; Phillips, T.J. ; Powell, J. ; Tang, W. H A ; Uren, M.J. ; Wallis, D.J. ; Wilding, P.J. ; Datta, S. ; Chau, R.
Author_Institution :
QinetiQ, Malvern Technology Centre, St Andrews Road, Malvern, WR14 3PS, UK. phone: +44 1684 894304, fax: +44 1684 896938, e-mail: tashley@qinetiq.com
fYear :
2006
fDate :
26-28 June 2006
Firstpage :
201
Lastpage :
202
Keywords :
Aluminum; Circuit noise; Cutoff frequency; Electron mobility; Etching; FETs; Indium gallium arsenide; Logic; Low voltage; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
ISSN :
1548-3770
Print_ISBN :
0-7803-9748-7
Type :
conf
DOI :
10.1109/DRC.2006.305056
Filename :
4097600
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3454394
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