Indium Antimonide based Quantum Well FETs for Ultra-High Speed Electronics

Author

Ashley, T. ; Buckle, L. ; Emeny, M.T. ; Fearn, M. ; Hayes, D.G. ; Hilton, K.P. ; Jefferies, R. ; Martin, T. ; Nash, K.J. ; Phillips, T.J. ; Powell, J. ; Tang, W. H A ; Uren, M.J. ; Wallis, D.J. ; Wilding, P.J. ; Datta, S. ; Chau, R.

Author_Institution

QinetiQ, Malvern Technology Centre, St Andrews Road, Malvern, WR14 3PS, UK. phone: +44 1684 894304, fax: +44 1684 896938, e-mail: tashley@qinetiq.com

fYear

2006

fDate

26-28 June 2006

Firstpage

201

Lastpage

202

Keywords

Aluminum; Circuit noise; Cutoff frequency; Electron mobility; Etching; FETs; Indium gallium arsenide; Logic; Low voltage; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2006 64th

Conference_Location

State College, PA, USA

ISSN

1548-3770

Print_ISBN

0-7803-9748-7

Type

DOI

10.1109/DRC.2006.305056

Filename

4097600

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