• DocumentCode
    3454399
  • Title

    A compare-and-write ferroelectric nonvolatile flip-flop for energy-harvesting applications

  • Author

    Wang, Jue ; Liu, Yongpan ; Yang, Huazhong ; Wang, Hui

  • Author_Institution
    Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
  • fYear
    2010
  • fDate
    21-23 June 2010
  • Firstpage
    646
  • Lastpage
    650
  • Abstract
    In this paper, a novel compare-and-write ferroelectric nonvolatile flip-flop is developed, which can be used in the checkpoint processor for energy-harvesting applications. It can make the processor nonvolatile, secure and instant recoverable from power failures. The behavior model of ferroelectric capacitor is set up to characterize its electrical property. An improved architecture of ferroelectric capacitor based flip-flop is proposed in which a compare-and-write block is used to decide if the state of ferroelectric capacitor should be changed. Thus, the presented architecture can prolong the lifetime of the ferroelectric capacitor by removing the unnecessary programming cycles. The design is implemented in HJTM 0.18 um CMOS process and simulation results show that the proposed ferroelectric nonvolatile flip-flop operates properly and reduces 40-80% programming cycles, which increases the lifetime of the ferroelectric capacitors effectively and expands its application in checkpoint processors for energy-harvesting area.
  • Keywords
    CMOS integrated circuits; SRAM chips; energy harvesting; ferroelectric capacitors; flip-flops; HJTM CMOS process; SRAM; checkpoint processor; compare-and-write ferroelectric nonvolatile flip-flop; electrical property; energy harvesting applications; ferroelectric capacitor behavior model; power failures; size 0.18 mum; CMOS technology; Capacitance; Capacitors; Circuits; Ferroelectric films; Ferroelectric materials; Flip-flops; Nonvolatile memory; Polarization; Random access memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Green Circuits and Systems (ICGCS), 2010 International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-6876-8
  • Electronic_ISBN
    978-1-4244-6877-5
  • Type

    conf

  • DOI
    10.1109/ICGCS.2010.5542984
  • Filename
    5542984