3454401

Increase in current density at 25-nm-wide emitter for InP hot-electron transistors without base layer

Miyamoto, Y. ; Kashima, I. ; Suwa, A. ; Furuya, Keiichi

Dept. of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152-8552, Japan; CREST, Japan Science and Technology Agency, 4-1-8 Honmachi, Kawaguchi-shi, Saitama 332-0012, Japan

2006

26-28 June 2006

203

204

Current density; Degradation; Electrons; Etching; Indium phosphide; Leakage current; Oxidation; Scattering; Transistors; Voltage;

English

ieee

Device Research Conference, 2006 64th

State College, PA, USA

1548-3770

0-7803-9748-7

conf

10.1109/DRC.2006.305057

4097601