• DocumentCode
    3454401
  • Title

    Increase in current density at 25-nm-wide emitter for InP hot-electron transistors without base layer

  • Author

    Miyamoto, Y. ; Kashima, I. ; Suwa, A. ; Furuya, Keiichi

  • Author_Institution
    Dept. of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152-8552, Japan; CREST, Japan Science and Technology Agency, 4-1-8 Honmachi, Kawaguchi-shi, Saitama 332-0012, Japan
  • fYear
    2006
  • fDate
    26-28 June 2006
  • Firstpage
    203
  • Lastpage
    204
  • Keywords
    Current density; Degradation; Electrons; Etching; Indium phosphide; Leakage current; Oxidation; Scattering; Transistors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2006 64th
  • Conference_Location
    State College, PA, USA
  • ISSN
    1548-3770
  • Print_ISBN
    0-7803-9748-7
  • Type

    conf

  • DOI
    10.1109/DRC.2006.305057
  • Filename
    4097601
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3454401