Frequency- and time-domain modeling tools for efficient RF/microwave transistor characterization

Author

Gaoua, S. ; Asadi, S. ; Yagoub, M.C.E.

Author_Institution

Fac. d´´Electron. et d´´Inf., USTHB, Algiers, Algeria

fYear

2009

fDate

6-8 Nov. 2009

Firstpage

1

Lastpage

6

Abstract

Widely used in RF/microwave systems, active devices like field effect transistors (FETs) need to be accurately modeled to achieve a reliable system design. In this paper, the authors proposed two techniques for efficient FET modeling. First, a fuzzy-neural frequency-domain approach was developed to allow selecting the most suitable electrical equivalent circuit model of a FET. Then, a time-domain approach was investigated to help developing enhanced distributed transistor models.

Keywords

field effect transistors; microwave transistors; semiconductor device models; FET modeling; RF/microwave transistor characterization; frequency-domain modeling tools; fuzzy-neural frequency-domain approach; time-domain modeling tools; Circuit topology; Data mining; Electric variables measurement; Equivalent circuits; Frequency measurement; Microwave FETs; Microwave transistors; Radio frequency; Scattering parameters; Time domain analysis; Distributed elements; FET; frequency-domain; fuzzy neural networks; modeling; time-domain;

fLanguage

English

Publisher

ieee

Conference_Titel

Signals, Circuits and Systems (SCS), 2009 3rd International Conference on

Conference_Location

Medenine

Print_ISBN

978-1-4244-4397-0

Electronic_ISBN

978-1-4244-4398-7

Type

conf

DOI

10.1109/ICSCS.2009.5412251

Filename

5412251