Simulation of geometry and surface effects in short gate length MESFETs and HEMTs

We summarise the features of the physical device simulators required for the design of new generation MESFETs and HEMTs. We also present the Glasgow simulation code H2F which meets most of these requirements. With the rapidly growing power of the single and multiple processor platforms the use of physical simulations including MC in the design process becomes not only necessary but feasible. We illustrate some of these points with steady-state and transient simulations