Monte Carlo modelling of heterojunction bipolar transistors

We have shown how Monte Carlo simulation can be used to model the behaviour of heterojunction bipolar transistors. It is a powerful tool for providing insight into the microscopic processes that determine device performance, and its firm physical basis makes it particularly appropriate for the investigation of hot carrier effects and processes taking place on short length and time scales. The large demand on computational resources is a disadvantage of two-dimensional Monte Carlo simulation which might be overcome by utilising the strengths of the method whilst linking it to other modelling techniques