Experimental study of GaAs photocathode performance in RF gun

Author

Aleksandrov, A.V. ; Dikansky, N.S. ; Gromov, R.G. ; Logatchov, P.V.

Author_Institution

BINP, Novosibirsk, Russia

Volume

1

fYear

1999

fDate

1999

Firstpage

78

Abstract

A prototype of an S-band RF photogun with a GaAs photocathode has been built and tested at Novosibirsk. The main goal of this prototype is to check the possibility of long time operation for the GaAs photocathode in a strong accelerating field of an RF cavity. The first experimental results concerning dark current and the lifetime of a GaAs photocathode in the negative electron affinity (NEA) condition under high RF power are presented. The dark current observed is much higher than predicted. A possible mechanism for large dark current emission from a NEA surface is suggested and discussed

Keywords

III-V semiconductors; accelerator RF systems; dark conductivity; electron guns; electron sources; gallium arsenide; photocathodes; GaAs; GaAs photocathode; RF cavity; RF gun; S-band; dark current; high RF power; lifetime; negative electron affinity; Acceleration; Cathodes; Current measurement; Dark current; Electron sources; Gallium arsenide; Polarization; Prototypes; Pulse measurements; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Particle Accelerator Conference, 1999. Proceedings of the 1999

Conference_Location

New York, NY

Print_ISBN

0-7803-5573-3

Type

conf

DOI

10.1109/PAC.1999.795629

Filename

795629