Robust magnetic full-adder with voltage sensing 2T/2MTJ cell

Spintronic devices, such as magnetic tunnel junction (MTJ), are under intense investigation to overcome the increasing power issues of modern computing system, especially as technology node scales below 45 nm. MTJ is one of the most promising candidates for the next generation memory and logic chips thanks to its non-volatility, fast access speed, high endurance and easy 3-D integration with CMOS technology. In order to build a high-performance magnetic processor, this paper proposes a new design of magnetic full-adder (MFA) whose input signals are all stored in non-volatile states. Input data Q is stored in MTJs that are embedded in the MFA, while input data A and B are stored in two voltage sensing 2T/2MTJ cells. By using an industrial CMOS 28 nm design kit and a MTJ compact model, we validate this MFA and confirm its merits of high robustness, high speed and low power consumption.