DocumentCode :
3454807
Title :
100 GHz SOI gap waveguides
Author :
Rahiminejad, S. ; Brazalez, A. Algaba ; Raza, Haider ; Pucci, Elena ; Haasl, S. ; Kildal, Per-Simon ; Enoksson, P.
Author_Institution :
Chalmers Univ. of Technol., Gothenburg, Sweden
fYear :
2013
fDate :
16-20 June 2013
Firstpage :
510
Lastpage :
513
Abstract :
Two gap waveguide technologies, groove and ridge, are presented here for F-band applications. Three different groove gap waveguide devices and four different ridge gap waveguide devices have been fabricated. All of them were micromachined to achieve the feature size required for the frequency band and fabricated in a single process using SOI wafers. The two types provide a more robust coupling to standard waveguides and high frequency probes. Measurements for most of the devices are shown in this paper, showing robust measurements and good agreement with simulations. More measurements need to be done but the initial ones show the promise both in the manufacturing technique and the coupling.
Keywords :
ridge waveguides; silicon-on-insulator; F-band application; SOI wafer; frequency 100 GHz; frequency band; gap waveguide technology; groove gap waveguide device; ridge gap waveguide device; robust coupling; Couplings; Loss measurement; Microstrip; Nails; Pins; Waveguide transitions; Bed of nails; Gap Waveguide; Groove; High-frequency; Micromachining; Ridge; Waveguide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), 2013 Transducers & Eurosensors XXVII: The 17th International Conference on
Conference_Location :
Barcelona
Type :
conf
DOI :
10.1109/Transducers.2013.6626815
Filename :
6626815
Link To Document :
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