Title :
Realization of a Ge nanowire p-n junction
Author :
Tutuc, E. ; Appenzeller, J. ; Reuter, M.C. ; Guha, S.
Author_Institution :
I.B.M. T.J. Watson Research Center, Yorktown Heights, NY 10598. phone: 9140-945-1909, fax: 914-945-2141, email: etutuc@us.ibm.com
Keywords :
Annealing; CMOS technology; FETs; Gold; Joining processes; Nanoscale devices; P-n junctions; Semiconductor device doping; Substrates; Wire;
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
Print_ISBN :
0-7803-9748-7
DOI :
10.1109/DRC.2006.305078
