A bandgap voltage reference using digital CMOS process

Author

Vermaas, Luiz L G ; De Mori, Carlos R T ; Moreno, Robson L. ; Pereira, Adriano M. ; Charry, R. Edgar

Author_Institution

Grupo de Microeletronica, Escola Fed. de Engenharia de Itajuba, Itajuba, Brazil

Volume

2

fYear

1998

fDate

1998

Firstpage

303

Abstract

This work describes some issues and criteria for the design of a bandgap voltage reference. It examines a particular voltage reference architecture, characteristics of the operational amplifier, parasitic bipolar transistor biasing currents and the start-up circuit. Test circuits have been fabricated in the AMS 0.8 μm n-well CMOS process. Experimental results yield an output voltage which is constant within 0.72% over the temperature range of -40°C to 95°C and the power supply range of 5 V±10%

Keywords

CMOS analogue integrated circuits; integrated circuit design; operational amplifiers; reference circuits; -10 to 95 C; 0.8 micron; 5 V; AMS n-well CMOS process; bandgap voltage reference; digital CMOS process; op amp characteristics; operational amplifier; parasitic bipolar transistor biasing currents; start-up circuit; Bipolar transistors; CMOS process; Circuit testing; Doping; MOSFETs; Operational amplifiers; Photonic band gap; Power supplies; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 1998 IEEE International Conference on

Conference_Location

Lisboa

Print_ISBN

0-7803-5008-1

Type

conf

DOI

10.1109/ICECS.1998.814886

Filename

814886