• DocumentCode
    3455085
  • Title

    Fast march tests for defects in resistive memory

  • Author

    Mozaffari, Seyed Nima ; Tragoudas, Spyros ; Haniotakis, Themistoklis

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Southern Illinois Univ., Carbondale, IL, USA
  • fYear
    2015
  • fDate
    8-10 July 2015
  • Firstpage
    88
  • Lastpage
    93
  • Abstract
    Resistive Memory is a promising candidate to several applications. However, is prone to high defects due to the nanoscale fabrication uncertainties. Test time of traditional testing techniques is dominated by writes which are slower than reads. Fast March tests for defects in resistive memory are proposed in this paper. Test application time is reduced by approximately 96% when compared to existing methods. An appropriate DfT scheme to implement the new test approach is also proposed.
  • Keywords
    design for testability; integrated circuit testing; nanofabrication; resistive RAM; DfT scheme; design for testability; fast march tests; nanoscale fabrication uncertainty; resistive memory; Decision support systems; Nanoscale devices; DfT Overhead; March test; fault detection; metal-oxide memristor; resistive memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoscale Architectures (NANOARCH), 2015 IEEE/ACM International Symposium on
  • Conference_Location
    Boston, MA
  • Type

    conf

  • DOI
    10.1109/NANOARCH.2015.7180592
  • Filename
    7180592
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3455085