Integration of CMOS process-compatible DNA-FET/REFET/QRE for the detection of DNA sequence

There have been considerable efforts to detect the occurrence of mutation and genetic disease by analyzing the deoxyribonucleic acid (DNA) sequence with the progress of life science. Recent discoveries and new techniques are completely changing our knowledge in living structures and overall open astonishing possibilities to explore and characterize genetic disease [1]. A field effect transistor (FET)-based DNA sensor which is fabricated by the semiconductor integrated circuit technology, has lately attracted considerable attention because of its many advantages in miniaturization, standardization, mass-production and suitable configuration for smart sensor in which both sensor and measurement circuit are integrated [2]. However, their industrial development is still limited by several drawbacks related to interferences due to light, temperature and noisy drift. Conventional reference eIectrodes (RE) such as Ag/AgCl electrode cause limitations in miniaturization of the whole sensor system and increase its cost. Therefore, FET-based sensors need a stable reference electrode for proper functioning. In this paper, to overcome these problems, a CMOS process-compatible DNA-FET/REFET/QRE was proposed.