DocumentCode :
3455279
Title :
Random Telegraph Noise in 130 nm n-MOS and p-MOS Transistors
Author :
Yoon, Youngchang ; Lee, HoChul ; Kang, In Man ; Park, Byung-Gook ; Lee, Jong Duk ; Shin, Hyungcheol
Author_Institution :
Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea. Tel : +82-2-880-7282, Fax : +82-2-882-4658, E-mail: y2chang@hanmail.net
fYear :
2006
fDate :
26-28 June 2006
Firstpage :
283
Lastpage :
284
Keywords :
Capacitance; Charge carrier density; Equations; Fluctuations; Low-frequency noise; MOSFETs; Noise level; Scattering; Telegraphy; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
ISSN :
1548-3770
Print_ISBN :
0-7803-9748-7
Type :
conf
DOI :
10.1109/DRC.2006.305184
Filename :
4097639
Link To Document :
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