Magnetoresistance implications for complementary magnetic tunnel junction logic (CMAT)

Author

Friedman, Joseph S. ; Querlioz, Damien ; Sahakian, Alan V.

Author_Institution

Inst. d´Electron. Fondamentale, Univ. Paris-Sud, Orsay, France

fYear

2015

fDate

8-10 July 2015

Firstpage

143

Lastpage

144

Abstract

This concept paper provides a first quantitative analysis of complementary magnetic tunnel junction logic (CMAT), a novel cascaded logic family composed solely of magnetic tunnel junctions (MTJs). CMAT is a non-volatile logic family driven by field-induced spin-switching that was inspired by CMOS. A compact CMAT multiplexer is presented, and the impact of magnetoresistance on its behavior is analyzed. The efficiency of CMAT is shown to be a function of the MTJ magnetoresistance, providing impetus for further development of MTJs for computing applications.

Keywords

CMOS logic circuits; cascade networks; magnetic logic; magnetic tunnelling; magnetoresistance; magnetoresistive devices; multiplexing equipment; CMAT multiplexer; CMOS; MTJ magnetoresistance; cascaded logic family; complementary magnetic tunnel junction logic; field-induced spin-switching; magnetoresistance implications; nonvolatile logic family; CMOS integrated circuits; Logic gates; Magnetic tunneling; Magnetoresistance; Multiplexing; Switches; Wires; beyond-CMOS computing; magnetic tunnel junction; non-Von Neumann architecture; spintronic logic;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoscale Architectures (NANOARCH), 2015 IEEE/ACM International Symposium on

Conference_Location

Boston, MA

Type

conf

DOI

10.1109/NANOARCH.2015.7180602

Filename

7180602