• DocumentCode
    3455371
  • Title

    Electrically-excited Infrared Emission from InN Nanowire Transistors

  • Author

    Chen, Jia ; Cheng, Guosheng ; Stern, Eric ; Reed, Mark A. ; Avouris, Phaedon

  • Author_Institution
    IBM T. J. Watson Research Center, Yorktown Heights, NY 10598. Tel: 1-914-945-2046; Fax: 1-914-945-4531; email: chenjia@us.ibm.com
  • fYear
    2006
  • fDate
    26-28 June 2006
  • Firstpage
    291
  • Lastpage
    292
  • Keywords
    Charge carrier density; Detectors; Electron emission; Electron mobility; Electron optics; Hot carriers; Indium; Lead compounds; Semiconductivity; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2006 64th
  • Conference_Location
    State College, PA, USA
  • ISSN
    1548-3770
  • Print_ISBN
    0-7803-9748-7
  • Type

    conf

  • DOI
    10.1109/DRC.2006.305187
  • Filename
    4097642