DocumentCode :
3455416
Title :
250 nm InGaAs/InP DHBTs w/650 GHz /spl conint/max and 420 GHz /spl conint/τ, operating above 30 mW/μm2
Author :
Lind, Erik ; Griffith, Zach ; Rodwell, Mark J.W. ; Fang, Xiao-Ming ; Loubychev, Dmitri ; Wu, Yu ; Fastenau, Joel M. ; Liu, Amy W K
Author_Institution :
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
fYear :
2006
fDate :
26-28 June 2006
Firstpage :
3
Lastpage :
4
Keywords :
Breakdown voltage; Calibration; Contact resistance; Current density; Double heterojunction bipolar transistors; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Ohmic contacts; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2006 64th
Conference_Location :
State College, PA, USA
ISSN :
1548-3770
Print_ISBN :
0-7803-9748-7
Type :
conf
DOI :
10.1109/DRC.2006.305190
Filename :
4097645
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3455416
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