Title :
Detection of CdS(Te) scintillation light with silicon photodiodes
Author :
Schotanus, P. ; Dorenbos, P. ; Ryzhikov, V.D.
Author_Institution :
Quartz & Silice Holland B.V., De Meern, Netherlands
Abstract :
Some scintillation characteristics of CdS(Te) have been investigated. The scintillation emission spectrum of CdS(Te) single crystals is situated in a band between 560 and 800 nm with a maximum at 640 nm. The light yield of this red emitting crystal on a microsecond time scale is rather large: approximately 1.7*10/sup 4/ photons per MeV absorbed gamma -ray energy. The scintillation light can be efficiently detected with silicon photodiodes; results are presented. Main decay time components of 270 ns and 3.0 mu s were measured. The scintillation mechanism and the application of the material are discussed. Some data regarding a similar system, ZnSe(Te), are also presented.<>
Keywords :
II-VI semiconductors; cadmium compounds; luminescence of inorganic solids; photoluminescence; scintillation; 270 ns; 3 mus; 560 to 800 nm; CdS:Te; Si photodiodes; ZnSe:Te; decay time; light yield; scintillation; scintillation mechanism; semiconductor; Crystalline materials; Optical materials; Photodiodes; Photomultipliers; Photonic crystals; Preamplifiers; Radiation detectors; Semiconductor device noise; Silicon; Solid scintillation detectors;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference, 1991., Conference Record of the 1991 IEEE
Conference_Location :
Santa Fe, NM, USA
Print_ISBN :
0-7803-0513-2
DOI :
10.1109/NSSMIC.1991.258898
