DocumentCode :
3456178
Title :
Base-dopant density variation with emitter size in polysilicon-emitter transistors
Author :
Yun, B.H. ; Cunningham, B. ; Snare, J. ; Barnes, K. ; Lange, R.C.
Author_Institution :
IBM, Hopewell Junction, NY, USA
fYear :
1991
fDate :
9-10 Sep 1991
Firstpage :
267
Lastpage :
270
Abstract :
Fabrication of polysilicon-emitter bipolar transistors with submicron emitter dimensions leads to diminished arsenic concentration in the emitter polysilicon. As a result, these small transistors are found to have significantly higher base dopant density, lower peak frequency response, and lower base current density than transistors with larger emitters made on the same silicon chip. Data indicate that these effects are caused, at least in part, by the steep topography of the polysilicon emitter. This topography results in lower arsenic concentrations in polysilicon of smaller emitters and, consequently, shallower emitter depths and wider base widths
Keywords :
bipolar transistors; current density; elemental semiconductors; impurities; semiconductor doping; silicon; surface topography; As concentration; base current density; base-dopant density variation; emitter size; emitter topography; peak frequency response; polycrystalline Si:As; polysilicon-emitter transistors; submicron emitter dimensions; Bipolar transistors; Current density; Degradation; Fabrication; Frequency measurement; Impurities; Measurement units; Semiconductor device measurement; Silicon; Surfaces;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-0103-X
Type :
conf
DOI :
10.1109/BIPOL.1991.161000
Filename :
161000
Link To Document :
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