DocumentCode
3456216
Title
Cd1-xZnxTe gamma ray detectors
Author
Butler, J.F. ; Lingren, C.L. ; Doty, F.P.
Author_Institution
Aurora Technologies Corp., San Diego, CA, USA
fYear
1991
fDate
2-9 Nov. 1991
Firstpage
129
Abstract
Results of an effort to improve the performance of CdTe detectors by addressing starting element purity and crystallinity are described. Structural perfection was improved by alloying with ZnTe to form crystals of Cd/sub 1-x/Zn/sub x/Te. Crystals were grown by a high-pressure Bridgman method. Evidence for significant enhancements of the mu tau products resulting from these efforts is presented. Features of Cd/sub 0.8/Zn/sub 0.2/Te detectors include energy resolutions at 122 keV <7%, a resistivity of approximately 10/sup 11/ Omega -cm, no polarization effects, and temperatures for useful operation up to 100 degrees C. The large sizes (e.g., 3 kg, 7.5-cm diameter) and excellent homogeneity of the crystals make it possible to produce detectors and imaging arrays with areas of several square inches.<>
Keywords
II-VI semiconductors; gamma-ray detection and measurement; semiconductor counters; 100 degC; 122 keV; 3 kg; 7.5 cm; Cd/sub 1-x/Zn/sub x/Te gamma ray detectors; crystallinity; energy resolutions; high-pressure Bridgman method; imaging arrays; mv tau products; purity; resistivity; Alloying; Conductivity; Crystallization; Crystals; Detectors; Energy resolution; Polarization; Tellurium; Temperature; Zinc compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium and Medical Imaging Conference, 1991., Conference Record of the 1991 IEEE
Conference_Location
Santa Fe, NM, USA
Print_ISBN
0-7803-0513-2
Type
conf
DOI
10.1109/NSSMIC.1991.258906
Filename
258906
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