DocumentCode
3456537
Title
Designing of LNA with protection from high level input power
Author
Abolduyev, L.M. ; Vald-Perlov, V.M.
fYear
1999
fDate
13-16 Sept. 1999
Firstpage
59
Lastpage
62
Abstract
In designing LNA it is necessary to conduct optimisation of scheme and topology of amplifier, choice of active element, protection, as well as reliability and price. Possible power level at the input of FET or HEMT LNA is chosen. Graphs correspond to average technological variant of GaAs FET or HEMT. Possible diffuse impulse power in GaAs transistor is discussed with respect to constant power.
Keywords
HEMT circuits; circuit reliability; field effect transistor circuits; microwave amplifiers; microwave circuits; FET; HEMT; LNA; diffuse impulse power; high level input power; reliability; topology; Gallium arsenide; Helium; IEEE catalog; Organizing; Protection;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1999. Microwave & Telecommunication Technology. 1999 9th International Crimean [In Russian with English abstracts]
Conference_Location
Sevastopol, Crimea, Ukraine
Print_ISBN
966-572-003-1
Type
conf
DOI
10.1109/CRMICO.1999.815143
Filename
815143
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