Impact of ion-implantation damage and transient-enhanced diffusion on advanced bipolar technologies-comparisons between experiments and non-equilibrium diffusion modeling

Author

Baccus, Bruno ; Wada, Tetsunori ; Shigyo, Naoyuki ; Norishima, Masayuki ; Iwai, Hiroshi

Author_Institution

ISEN, Lille, France

fYear

1991

fDate

9-10 Sep 1991

Firstpage

275

Lastpage

278

Abstract

The influence of ion-implantation damage on the formation of emitter and base in advanced bipolar technologies is studied. A novel nonequilibrium diffusion model has been developed to analyze this issue. By comparing simulation and experiments on a 0.5-μm BiCMOS technology, transient-enhanced diffusion phenomena for rapid thermal anneal and furnace annealing are discussed. Two-dimensional effects are reported

Keywords

BIMOS integrated circuits; annealing; bipolar integrated circuits; diffusion in solids; integrated circuit technology; ion implantation; semiconductor device models; 0.5 micron; BiCMOS technology; RTA; advanced bipolar technologies; base formation; emitter formation; furnace annealing; ion-implantation damage; nonequilibrium diffusion model; rapid thermal anneal; transient-enhanced diffusion; two-dimensional effects; Boron; Furnaces; Impurities; Ion implantation; Poisson equations; Semiconductor devices; Semiconductor process modeling; Simulated annealing; Temperature distribution; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-0103-X

Type

conf

DOI

10.1109/BIPOL.1991.161002

Filename

161002