Physics-topological design of GaAs field-effect transistors with a Schottky barrier

In this paper the results of physics-topological design of GaAs field-effect transistors with a Schottky barrier (MESFET) are presented. A linear process and physics-based MESFET model were used for the design. A distinctive feature of the model is that the output parameters of the designed device can be forecast before its manufacture and measurement of the microwave parameters. The questions concerning the influence of the fundamental technological factors are surveyed: channel doping density and electron mobilities; the geometrical dimensions of the transistor; gate lengths, fingers width and quantity. The parameters of the MESFET equivalent circuit and maximum available gain of the transistor in a frequency band are deduced. The good coincidence of calculated and measured parameters is shown.