DocumentCode
3456864
Title
Green design techniques for RF front-end circuits
Author
Feng, Wu-Shiung ; Hsu, Hui-Chen ; Tsao, Cheng-Ming ; Chen, Chia-Hsun ; Li, Ho-Hsin ; Wei, Chien-Cheng
Author_Institution
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
fYear
2010
fDate
21-23 June 2010
Firstpage
1
Lastpage
4
Abstract
In the near decade, following the advances in CMOS technology, RF CMOS circuits have been extensively applied in consumer products and wireless communication systems. Meanwhile, the demand of green design mechanism is becoming more and more important for circuit designs. This paper proposes the green design strategies for RF circuits, such as PA, LNA, mixer, and VCO. The design strategies focus on not only the low power consumption with reused bias current but also the small chip area for low spurious environment contamination. For the low-power design, some published literatures have been adopted the operation voltage from 3V down to only 0.2V, to save the dissipated dc power from tens mW to several hundreds of μW. Additionally, many design strategies and green figures of merit (GFOM) are also presented and proposed in this paper, for the future green RF circuit design.
Keywords
CMOS integrated circuits; integrated circuit design; low-power electronics; radiofrequency integrated circuits; RF CMOS circuits; RF front-end circuits; circuit designs; consumer products; green design techniques; green figure of merit; low-power design; low-spurious environment contamination; voltage 3 V to 0.2 V; wireless communication systems; Circuits; Dielectric loss measurement; Dielectric losses; Energy consumption; Energy efficiency; Power transmission lines; Radio frequency; Skin effect; Transmission line measurements; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Green Circuits and Systems (ICGCS), 2010 International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-6876-8
Electronic_ISBN
978-1-4244-6877-5
Type
conf
DOI
10.1109/ICGCS.2010.5543107
Filename
5543107
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