DocumentCode :
3456901
Title :
Growth of Quartz Thin Films by Catalyst-Enhanced Vapour-Phase Epitaxy under Atmospheric Pressure
Author :
Nakamura, Takato
Author_Institution :
Shizuoka Univ., Hamamatsu
fYear :
2007
fDate :
May 29 2007-June 1 2007
Firstpage :
1064
Lastpage :
1066
Abstract :
Preparation of quartz films by means of catalyst-enhanced chemical vapour deposition utilizing the reaction between Si(OC2H5)4 and O2 in the presence of gaseous HCl is summarized.
Keywords :
catalysts; chemical vapour deposition; epitaxial growth; quartz; thin film devices; atmospheric pressure; catalyst-enhanced vapour-phase epitaxy; chemical vapour deposition; quartz thin films growth preparation; Chemical vapor deposition; Epitaxial growth; Inductors; Luminescence; Scanning electron microscopy; Sputtering; Substrates; Surface morphology; Temperature; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Frequency Control Symposium, 2007 Joint with the 21st European Frequency and Time Forum. IEEE International
Conference_Location :
Geneva
ISSN :
1075-6787
Print_ISBN :
978-1-4244-0646-3
Electronic_ISBN :
1075-6787
Type :
conf
DOI :
10.1109/FREQ.2007.4319242
Filename :
4319242
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3456901
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