• DocumentCode
    3456901
  • Title

    Growth of Quartz Thin Films by Catalyst-Enhanced Vapour-Phase Epitaxy under Atmospheric Pressure

  • Author

    Nakamura, Takato

  • Author_Institution
    Shizuoka Univ., Hamamatsu
  • fYear
    2007
  • fDate
    May 29 2007-June 1 2007
  • Firstpage
    1064
  • Lastpage
    1066
  • Abstract
    Preparation of quartz films by means of catalyst-enhanced chemical vapour deposition utilizing the reaction between Si(OC2H5)4 and O2 in the presence of gaseous HCl is summarized.
  • Keywords
    catalysts; chemical vapour deposition; epitaxial growth; quartz; thin film devices; atmospheric pressure; catalyst-enhanced vapour-phase epitaxy; chemical vapour deposition; quartz thin films growth preparation; Chemical vapor deposition; Epitaxial growth; Inductors; Luminescence; Scanning electron microscopy; Sputtering; Substrates; Surface morphology; Temperature; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Frequency Control Symposium, 2007 Joint with the 21st European Frequency and Time Forum. IEEE International
  • Conference_Location
    Geneva
  • ISSN
    1075-6787
  • Print_ISBN
    978-1-4244-0646-3
  • Electronic_ISBN
    1075-6787
  • Type

    conf

  • DOI
    10.1109/FREQ.2007.4319242
  • Filename
    4319242
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3456901