• DocumentCode
    3456913
  • Title

    Thin AlN Film Resonators utilizing the Lowest order Symmetric Lamb mode: Further Developments

  • Author

    Yantchev, V. ; Katardjiev, I.

  • Author_Institution
    Uppsala Univ., Uppsala
  • fYear
    2007
  • fDate
    May 29 2007-June 1 2007
  • Firstpage
    1067
  • Lastpage
    1072
  • Abstract
    Thin film plate acoustic wave resonators utilizing the lowest order symmetric lamb wave (SO) propagating in highly textured 2 mum thick aluminum nitride (AlN) membranes were successfully demonstrated for the first time. Further the utilization of fast lateral modes in thin films has recently being targeted independently by other groups as well. The unperturbed SO mode in thin film AlN has an acoustic wave velocity in excess of 10 000 m/s with a weak dispersion and sufficient coupling. Q factors of around 1800 were demonstrated for 890 MHz one-port synchronous resonators operating in the vicinity of the upper stopband edge. In this work an experimental study on the resonators´ performance vs variety of design parameters is performed. Devices operating in the vicinity of the stopband center offering a Q of up to 3000 at a frequency of around 875 MHz are demonstrated. Further, micromachined 2-port longitudinally coupled thin film resonators utilizing the SO mode are demonstrated for the first time.
  • Keywords
    III-V semiconductors; UHF devices; acoustic wave propagation; acoustic wave velocity; aluminium compounds; plates (structures); surface acoustic wave resonators; thin film devices; two-port networks; AlN; Q factors; acoustic wave velocity; aluminum nitride membranes; design parameters; frequency 890 MHz; lowest order symmetric lamb wave propagation; micromachined 2-port longitudinally coupled thin film resonators; one-port synchronous resonators; size 2 mm; thin film plate acoustic wave resonators; weak dispersion; Acoustic devices; Acoustic propagation; Acoustic waves; Aluminum oxide; Biomembranes; Frequency; Surface acoustic wave devices; Surface acoustic waves; Thin film devices; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Frequency Control Symposium, 2007 Joint with the 21st European Frequency and Time Forum. IEEE International
  • Conference_Location
    Geneva
  • ISSN
    1075-6787
  • Print_ISBN
    978-1-4244-0646-3
  • Electronic_ISBN
    1075-6787
  • Type

    conf

  • DOI
    10.1109/FREQ.2007.4319243
  • Filename
    4319243