Title :
High performance and high reliability InP HEMT low noise amplifiers for phased-array applications
Author :
Grundbacher, Ronald ; Chou, Yeong-Chang ; Lai, Richard ; Ip, Kwan ; Kam, Stuart ; Barsky, Mike ; Hayashibara, George ; Leung, Denise ; Eng, David ; Tsai, Roger ; Nishimoto, Matt ; Block, Tom ; Liu, Po-Hsin ; Oki, Aaron
Author_Institution :
Northrop Grumman Space Technol., Redondo Beach, CA, USA
Abstract :
This paper describes the development of a Q-band low noise amplifier unit using a 0.1 μm InP HEMT MMICs that has been demonstrated with high RF performance and high reliability over a frequency band from 43.5 to 45.5 GHz at Northrop Grumman Space Technology (NGST). The InP HEMT LNAs with high RF performance and high reliability are crucial for the advanced phased-array applications. The module demonstrates superior performance with gain greater than 30.1 dB and noise figure less than 3.2 dB over the frequency band of 43.5 to 45.5 GHz. The InP HEMT technology has an activation energy of 1.9 eV and mean-time-to-failure of 108 hours at Tjunction of 125°C and these MMICs further demonstrate the readiness of NGST´s 0.1 μm InP HEMT MMICs technology for the advanced phased-array applications.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; indium compounds; integrated circuit noise; integrated circuit reliability; 0.1 micron; 1.9 eV; 125 C; 43.5 to 45.5 GHz; HEMT MMIC; HEMT low noise amplifiers; InP; Northrop Grumman Space Technology; Q-band low noise amplifier; RF performance; high electron mobility transistors; phased-array applications; HEMTs; Indium phosphide; Low-noise amplifiers; MMICs; Noise figure; Performance gain; Phase noise; Radio frequency; Radiofrequency amplifiers; Space technology;
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
Print_ISBN :
0-7803-8331-1
DOI :
10.1109/MWSYM.2004.1335829
