High Overtone Bulk Acoustic Resonators Based on Thinning Single-crystal Piezoelectric Layers

Author

Gachon, D. ; Courjon, E. ; Masson, J. ; Guichardaz, B. ; Ballandras, S.

Author_Institution

FEMTO-ST Inst., Besancon

fYear

2007

fDate

May 29 2007-June 1 2007

Firstpage

1143

Lastpage

1146

Abstract

Bulk acoustic waves excited in thin piezoelectric films have revealed their capabilities for addressing the problem of high frequency RF filters (above 1 GHz). In this paper, we propose an alternative to thin film deposition consisting in single crystal wafers bonded on a substrate (for instance silicon) and thinned, allowing for plate thickness close to 10 mum. This has been achieved on 3 inches wafers and allows for an accurate selection of the wave characteristics. More, the properties of the piezoelectric material are found conform with tabulated values, enabling one to reliably design any passive signal processing device.

Keywords

acoustic resonators; crystal filters; piezoelectric materials; piezoelectric thin films; radiofrequency filters; wafer bonding; bulk acoustic resonator; crystal wafer bonding; high frequency RF filter; passive signal processing device design; piezoelectric material properties; thin film deposition; thinning single-crystal piezoelectric layer; Acoustic waves; Materials reliability; Piezoelectric films; Piezoelectric materials; Radio frequency; Resonator filters; Silicon; Sputtering; Substrates; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium, 2007 Joint with the 21st European Frequency and Time Forum. IEEE International

Conference_Location

Geneva

ISSN

1075-6787

Print_ISBN

978-1-4244-0646-3

Electronic_ISBN

1075-6787

Type

conf

DOI

10.1109/FREQ.2007.4319257

Filename

4319257